參數(shù)資料
型號: BUK7618-55
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Standard level FET
中文描述: 57 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 3/8頁
文件大?。?/td> 68K
代理商: BUK7618-55
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
BUK7618-55
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 50 A; V
25 V;
V
GS
= 10 V; R
GS
= 50
; T
mb
= 25 C
MIN.
-
TYP.
-
MAX.
125
UNIT
mJ
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
VDS / V
ID / A
1 us
10 us
100 us
1 ms
10 ms
100 ms
tp =
1
10
100
1000
1
10
RDS(ON) = VDS/ID
DC
SOAX518
100
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx55-lv
D =
D =
t
p
t
p
T
T
P
D
t
April 1998
3
Rev 1.000
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