參數(shù)資料
型號: BUK7616-55A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS standard level FET
中文描述: 65.7 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 4/15頁
文件大小: 306K
代理商: BUK7616-55A
Philips Semiconductors
BUK7516-55A; BUK7616-55A
TrenchMOS standard level FET
Product specification
Rev. 01 — 18 January 2001
4 of 15
9397 750 07682
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
Figure 4
Value
60
50
Unit
K/W
K/W
R
th(j-mb)
thermal resistance from junction to mounting
base
1.1
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03nc00
Single Shot
0.2
0.1
0.05
0.02
10-3
10-2
10-1
1
10
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
(K/W)
δ
= 0.5
tp
tp
T
T
P
t
δ
=
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