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參數(shù)資料
| 型號： | BUK7606-55 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶體管標(biāo)準(zhǔn)電平FET) |
| 中文描述： | TrenchMOS（商標(biāo)）一級標(biāo)準(zhǔn)場效應(yīng)晶體管（TrenchMOS（商標(biāo)）晶體管標(biāo)準(zhǔn)電平場效應(yīng)管） |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 69K |
| 代理商： | BUK7606-55 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
BUK7606-55A
Fig.7. Typical on-state resistance, T
= 25 C
R
DS(ON)
= f(V
GS
); conditions I
D
= 25 A;
Fig.8. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.9. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
Fig.11. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.12. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
5
10
15
20
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5RDS(ON)/mOhm
VGS/V
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
0
1
2
3
4
5
6
7
0
20
40
60
80
100
ID/A
VGS/V
Tj/C =
175
25
BUK759-60
0
-50
0
50
100
150
200
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
20
40
60
80
100
0
10
20
30
40
50
60
70
80
90
gfs/S
ID/A
0
1
2
3
4
5
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
January 1999
4
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK7606-55A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS standard level FET |
| BUK7606-55A /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7606-55A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7606-55B /T3 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7606-55B,118 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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