參數(shù)資料
型號： BUK7535-100A
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS standard level FET
中文描述： N溝道TrenchMOS標準電平場效應(yīng)管
封裝： BUK7535-100A<SOT78A (TO-220AB)|<<http://www.nxp.com/packages/SOT78A.html<1<week 1, 2005,;
文件頁數(shù)： 1/14頁
文件大小： 210K
代理商： BUK7535-100A
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
BUK7535-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 21 February 2011
Product data sheet
T-2A
Quick reference data
Parameter
drain-source voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
; see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
Typ
-
-
Max
100
41
Unit
V
A
P
tot
Static characteristics
R
DSon
drain-source on-state
resistance
total power dissipation
-
-
149
W
V
GS
= 10 V; I
D
= 25 A;
T
j
= 175 °C; see
Figure 12
;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 12
;
see
Figure 13
-
-
88
m
-
21
35
m
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
= 25 A; V
sup
≤
100 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
110
mJ
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK7535-100A,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7535-55 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
BUK7535-55A 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7535-55A,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7535-55A/B 制造商:NXP Semiconductors 功能描述:
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