- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385201 > BUK7511-55B (NXP Semiconductors N.V.) N-channel TrenchMOS standard level FET PDF資料下載
參數(shù)資料
| 型號(hào)： | BUK7511-55B |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | N溝道TrenchMOS標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管 |
| 封裝： | BUK7511-55B<SOT78A (TO-220AB)|<<http://www.nxp.com/packages/SOT78A.html<1<week 1, 2005,; |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大小： | 208K |
| 代理商： | BUK7511-55B |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
BUK7511-55B
N-channel TrenchMOS standard level FET
Rev. 3 — 31 January 2011
Product data sheet
T-2A
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
V
DS
drain-source
voltage
T
j
≥
25 °C; T
j
≤
175 °C
-
-
55
V
I
D
drain current
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
; see
Figure 3
[1]
-
-
75
A
P
tot
total power
dissipation
T
mb
= 25 °C; see
Figure 2
-
-
157
W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11
;
see
Figure 12
-
9.9
11
m
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK7513-75B | N-channel TrenchMOS standard level FET |
| BUK7514-55A | N-channel TrenchMOS standard level FET |
| BUK7515-100A | N-channel TrenchMOS standard level FET |
| BUK75150-55A | N-channel TrenchMOS standard level FET |
| BUK7520-100A | N-channel TrenchMOS standard level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK7511-55B,127 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7513-75B | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7513-75B,127 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7514-30 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| BUK7514-55 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。