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參數(shù)資料
| 型號： | BUK662R4-40C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS FET |
| 中文描述： | 120 A, 40 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 366K |
| 代理商： | BUK662R4-40C |
BUK662R4-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 2 November 2010
11 of 14
NXP Semiconductors
BUK662R4-40C
N-channel TrenchMOS FET
8.
Revision history
Table 7.
Document ID
BUK662R4-40C v.2
Modifications:
BUK662R4-40C v.1
Revision history
Release date
20101102
Status changed from objective to product.
20100330
Data sheet status
Product data sheet
Change notice
-
Supersedes
BUK662R4-40C v.1
Objective data sheet
-
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK662R5-30C | N-channel TrenchMOS intermediate level FET |
| BUK662R7-55C | N-channel TrenchMOS intermediate level FET |
| BUK663R2-40C | N-channel TrenchMOS intermediate level FET |
| BUK663R5-30C | N-channel TrenchMOS intermediate level FET |
| BUK663R5-55C | N-channel TrenchMOS intermediate level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK662R4-40C,118 | 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK662R5-30C | 制造商:NXP Semiconductors 功能描述:Tube 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V100ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,100A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,100A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 30V 100A 3-Pin(2+Tab) D2PAK |
| BUK662R5-30C,118 | 功能描述:MOSFET N-CHAN 30V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK662R7-55C | 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:55V; On Resistance Rds(on):2.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes |
| BUK662R7-55C,118 | 功能描述:MOSFET N-CHAN 55V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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