參數(shù)資料
型號： BUK653R3-30C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 30 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 7/14頁
文件大?。?/td> 179K
代理商： BUK653R3-30C
BUK653R3-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 July 2011
7 of 14
NXP Semiconductors
BUK653R3-30C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
I
S
= 20 A; dI
S
/dt = -100 A/μs; V
GS
= 0 V;
V
DS
= 25 V
-
0.8
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
50
73
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
T
j
= 25°C; V
DS
= 25 V
Forward transconductance as a function of
drain current; typical values
T
j
= 25°C and t
p
= 300 us
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 5.
Fig 6.
V
DS
= 25 V
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
= 25°C; I
D
25 A
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 7.
Fig 8.
003aae532
0
30
60
90
120
150
g
fs
(S)
0
30
60
90
120
150
I
D
(A)
003aae533
0
50
100
150
200
0
0.5
1
1.5
2
V
DS
(V)
I
D
(A)
3.8
4
4.5
5
6
3.2
V
GS
(V) = 10
3.4
3.6
003aae534
0
40
80
120
0
1
2
3
4
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
003aae535
0
3
6
9
12
0
5
10
15
20
V
GS
(V)
R
DSon
(m
Ω
)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK653R3-30C,127 功能描述:MOSFET N-Chan 30V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK653R4-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V100ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,100A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,100A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3050ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK653R4-40C,127 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK653R5-55C 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,120A,SOT78
BUK653R5-55C,127 功能描述:MOSFET N-CHAN 55V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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