參數(shù)資料
型號： BUK653R2-55C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 120 A, 55 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 6/14頁
文件大?。?/td> 182K
代理商： BUK653R2-55C
BUK653R2-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 September 2010
6 of 14
NXP Semiconductors
BUK653R2-55C
N-channel TrenchMOS intermediate level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
D
= 2.5 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -20 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 12
; see
Figure 11
55
50
1.8
-
-
2.3
-
-
2.8
V
V
V
V
GS(th)
gate-source threshold
voltage
-
-
3.3
V
0.8
-
-
V
I
DSS
drain leakage current
-
-
-
-
-
-
0.02
2
2
2.7
500
1
100
100
3.2
μA
μA
nA
nA
m
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
-
3.3
4.2
m
-
3.6
4.8
m
-
-
7.1
m
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 44 V; V
GS
= 5 V;
see
Figure 13
; see
Figure 14
I
D
= 25 A; V
DS
= 44 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
-
146
-
nC
-
-
-
-
-
-
258
35
75
11430
1100
772
-
-
-
15300 pF
1320
1060
nC
nC
nC
Q
GS
Q
GD
C
iss
C
oss
C
rss
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 15
pF
pF
t
d(on)
t
r
t
d(off)
t
f
L
D
V
DS
= 45 V; R
L
= 1.8
; V
GS
= 10 V;
R
G(ext)
= 10
-
-
-
-
-
61
101
450
186
4.5
-
-
-
-
-
ns
ns
ns
ns
nH
from drain lead 6 mm from package to
centre of die ; T
j
= 25 °C
from source lead to source bond pad ;
T
j
= 25 °C
L
S
-
7.5
-
nH
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