型號: | BUK638-1000B |
廠商: | NXP Semiconductors N.V. |
英文描述: | PowerMOS transistor Fast recovery diode FET |
中文描述: | PowerMOS晶體管快速恢復(fù)二極管場效應(yīng)管 |
文件頁數(shù): | 3/5頁 |
文件大?。?/td> | 188K |
代理商: | BUK638-1000B |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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BUK638-500B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Fast recovery diode FET |
BUK638-800 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Fast recovery diode FET |
BUK638-800A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Fast recovery diode FET |
BUK638-800B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Fast recovery diode FET |
BUK6507-55C | 制造商:NXP Semiconductors 功能描述:Tube 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V72ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,72A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,72A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-220AB |