參數(shù)資料
型號： BUK6213-30C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 47 A, 30 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 6/14頁
文件大?。?/td> 171K
代理商： BUK6213-30C
BUK6213-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2010
6 of 14
NXP Semiconductors
BUK6213-30C
N-channel TrenchMOS intermediate level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source breakdown
voltage
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 9
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 9
V
DS
= 30 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -20 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 4.5 V; I
D
= 10 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 10 A; T
j
= 175 °C;
see
Figure 12
; see
Figure 11
30
27
1.8
-
-
2.3
-
-
2.8
V
V
V
V
GS(th)
gate-source threshold voltage
-
-
3.3
V
0.8
-
-
V
I
DSS
drain leakage current
-
-
-
-
-
-
0.02
2
2
11.9
500
1
100
100
14
μA
μA
nA
nA
m
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
-
17.5
22
m
-
21.5
29
m
-
-
26.6
m
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 24 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
I
D
= 25 A; V
DS
= 24 V; V
GS
= 5 V;
see
Figure 13
; see
Figure 14
I
D
= 25 A; V
DS
= 24 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
-
19.5
-
nC
-
10.8
-
nC
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
-
-
-
-
-
-
-
-
-
-
4.37
4.77
830
161
104
8.9
11.4
30
18.6
3.5
-
-
1108
194
143
-
-
-
-
-
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 15
V
DS
= 25 V; R
L
= 1
; V
GS
= 10 V;
R
G(ext)
= 10
from upper edge of drain mounting
base to centre of die ; T
j
= 25 °C
from source lead to source bond
pad ; T
j
= 25 °C
L
S
internal source inductance
-
7.5
-
nH
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參數(shù)描述
BUK6213-30C,118 功能描述:MOSFET N-CHAN 30V 47A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6215-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V57ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,57A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,57A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:75V; On Resistance Rds(on):12.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6215-75C,118 功能描述:MOSFET N-CHAN 75V 57A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6217-55C 制造商:NXP Semiconductors 功能描述:MOSFETN CH44V31ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,44V,31A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,44V,31A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:55V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6217-55C,118 功能描述:MOSFET N-CHAN 55V 44A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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