參數(shù)資料
型號： BUK6210-55C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 78 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 6/14頁
文件大?。?/td> 357K
代理商： BUK6210-55C
BUK6210-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 4 October 2010
6 of 14
NXP Semiconductors
BUK6210-55C
N-channel TrenchMOS intermediate level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
= -55 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -20 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 15 A; T
j
= 175 °C;
see
Figure 12
; see
Figure 11
55
50
1.8
-
-
2.3
-
-
2.8
V
V
V
V
GS(th)
gate-source threshold
voltage
-
-
3.3
V
0.8
-
-
V
I
DSS
drain leakage current
-
-
-
-
-
-
0.02
2
2
8.1
500
1
100
100
9.6
μA
μA
nA
nA
m
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
-
9.9
13.2
m
-
10.8
14.5
m
-
-
21.2
m
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 44 V; V
GS
= 5 V;
see
Figure 13
; see
Figure 14
I
D
= 25 A; V
DS
= 44 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
I
D
= 25 A; V
DS
= 44 V; V
GS
= 10 V;
see
Figure 13
I
D
= 25 A; V
DS
= 44 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 15
-
34.4
-
nC
-
63
-
nC
Q
GS
gate-source charge
-
10.4
-
nC
Q
GD
gate-drain charge
-
19.5
-
nC
C
iss
C
oss
C
rss
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
-
-
-
2990
290
205
4000
350
281
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
L
D
V
DS
= 45 V; R
L
= 1.8
; V
GS
= 10 V;
R
G(ext)
= 10
-
-
-
-
-
16
45
130
74
3.5
-
-
-
-
-
ns
ns
ns
ns
nH
from upper edge of drain mounting base
to centre of die; T
j
= 25 °C
from source lead to source bond pad;
T
j
= 25 °C
L
S
-
7.5
-
nH
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BUK6210-55C,118 功能描述:MOSFET N-CHAN 55V 78A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6211-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V52ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,52A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,52A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:75V; On Resistance Rds(on):9.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6211-75C,118 功能描述:MOSFET N-CHAN 75V 74A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6212-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V41ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,41A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,41A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6212-40C,118 功能描述:MOSFET N-CHAN 40V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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