參數(shù)資料
型號(hào)： BUK583-60A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor Logic level FET
中文描述： 3.2 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 55K
代理商： BUK583-60A
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK583-60A
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
amb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
amb
); conditions: V
GS
≥
5 V
Fig.3. Transient thermal impedance.
Z
th j-amb
= f(t); parameter D = t
p
/T
Fig.4. Safe operating area T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
Tamb / C
0.1
1
10
100
VDS / V
ID / A
100
10
1
0.1
0.01
BUK583-60A
100 us
1 ms
10 ms
100 ms
1 s
10 s
RDSON =VDSID
DC
tp = 10 us
0
20
40
60
80
100
120
140
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
Tamb / C
0
1
2
10
9
8
7
6
5
4
3
2
1
0
0.5
1.5
ID / A
VDS / V
2.5
VGS / V = 3.0
3.5
4.0
4.5
5.0
1E-07
1E-05
1E-03
1E-01
1E+01
1E+03
BUKX83
t / s
Zth j-amb / (K/W)
D =
1E+02
1E+01
1E+00
1E-01
1E-02
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
D
t
0
2
4
6
8
10
1.2
1
0.8
0.6
0.4
0.2
0
ID / A
RDS(ON) / Ohm
VGS / V = 2.5
3
3.5
September 1995
3
Rev 1.200
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