參數(shù)資料
型號(hào): BUK563-48C
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Voltage clamped logic level FET
中文描述: 21 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 72K
代理商: BUK563-48C
Philips Semiconductors
Product specification
PowerMOS transistor
Voltage clamped logic level FET
BUK563-48C
Fig.11. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 10 A; V
GS
= 5 V
Fig.12. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.13. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.14. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.15. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.16. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 10 A; parameter V
DS
-60
-20
20
60
100
140
180
Tj / C
Normalised RDS(ON) = f(Tj)
2.0
1.5
1.0
0.5
0
a
-60
-20
20
60
100
140
180
Tj / C
VGS(TO) / V
2
1
0
max.
typ.
min.
0
0.4
0.8
1.2
1.6
2
2.4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
2 %
typ
98 %
0
0.5
1
1.5
0
10
20
30
40
BUK5Y3-48C
VSDS / V
IS / A
Tmb / degC =
150
25
-55
0.01
0.1
1
10
100
50
100
1000
2000
BUK5Y3-48C
VDS / V
C / pF
Ciss
Crss
Coss
500
200
0
5
10
15
20
0
1
2
3
4
5
6
7
BUK5Y3-48C
QG / nC
VGS / V
VDD / V = 12
30
February 1996
5
Rev 1.000
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