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參數(shù)資料
| 型號： | BUK562-100A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 10 A, 100 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BUK562-100A |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK562-100A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and in
automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
100
10
60
175
0.28
V
A
W
C
V
GS
= 5 V
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
±
V
GSM
Non-repetitive gate-source voltage t
p
≤
50
μ
s
I
D
Drain current (DC)
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
-
-
-
-
-
- 55
-
MAX.
100
100
15
20
10
7
40
60
175
175
UNIT
V
V
V
V
A
A
A
W
C
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
2.5
UNIT
K/W
minimum footprint,
FR4 board (see fig. 18).
-
50
-
K/W
1
3
mb
2
d
g
s
February 1996
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK562-60A | PowerMOS transistor Logic level FET |
| BUK563-100A | PowerMOS transistor Logic level FET |
| BUK563-48C | PowerMOS transistor Voltage clamped logic level FET |
| BUK563-60A | PowerMOS transistor Logic level FET |
| BUK563-80B | TRANS PREBIASED PNP 200MW SOT23 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK562-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK563-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK563-48C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Voltage clamped logic level FET |
| BUK563-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK563-80B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS Transistor Logic level FET |
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