參數(shù)資料
型號(hào)： BUK553-48C
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor Voltage clamped logic level FET
中文描述： 21 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 69K
代理商： BUK553-48C
Philips Semiconductors
Product specification
PowerMOS transistor
Voltage clamped logic level FET
BUK553-48C
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DG
Drain-gate zener voltage
CONDITIONS
0.2 < -I
< 0.4 mA;
-55C < T
< 150C
V
DS
= V
; I
D
= 1 mA
V
= 10 V; I
= 10 A;
-55C < T
< 150C
V
DS
= 30 V; V
GS
= 0 V; T
j
=150 C
V
GS
=
±
15 V; V
= 0 V; T
j
=150 C
V
GS
= 5 V; I
D
= 10 A
MIN.
38
TYP.
45
MAX.
54
UNIT
V
V
GS(TO)
V
GS(ON)
Gate threshold voltage
Gate voltage
1.0
2.0
1.5
3.1
2.0
4.0
V
V
I
DSS
I
GSS
R
DS(ON)
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
-
-
-
0.01
0.1
65
1.0
10
85
mA
μ
A
m
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(CL)DSR
Drain source clamp voltage
(peak value)
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
R
= 10 k
; I
= 10 A;
-55 < T
j
< 150C; Inductive load.
V
DS
= 25 V; I
D
= 10 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
40
TYP.
48
MAX.
58
UNIT
V
7
-
-
-
-
-
-
-
-
12
550
240
100
3.5
22
16
18
4.5
-
S
pF
pF
pF
μ
s
μ
s
μ
s
μ
s
nH
825
350
160
-
-
-
-
-
V
DD
= 12 V; I
D
= 5 A;
V
GS
= 5 V; R
G
= 10 k
;
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
21
UNIT
A
-
I
F
= 21 A ; V
GS
= 0 V
-
-
-
84
1.7
A
V
1.3
August 1994
2
Rev 1.000
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