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參數(shù)資料
| 型號(hào)： | BUK552-60A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Polyester Film Radial Lead Capacitor; Capacitance: 6800uF; Voltage: 100V; Case Size: 6x10.5 mm; Packaging: Bulk |
| 中文描述： | 14 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | BUK552-60A |
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK552-60A/B
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 14 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 14 A
Fig.16. Avalanche energy test circuit.
W
DSS
=
0.5
LI
D
0
2
4
6
8
10
12
14
16
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V =10
40
BUK552-50
20
40
60
80
100
Tmb / C
120
140
160
180
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
1
2
BUK552-60A
VSDS / V
30
20
10
0
IF / A
Tj / C = 150
25
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
BV
DSS
/(
BV
DSS
V
DD
)
April 1993
5
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK552-60 | PowerMOS transistor Logic level FET |
| BUK552-60B | PowerMOS transistor Logic level FET |
| BUK553-100A | PowerMOS transistor Logic level FET |
| BUK553-100B | PowerMOS transistor Logic level FET |
| BUK553-48C | PowerMOS transistor Voltage clamped logic level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK552-60B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK553-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK553-100A/B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TRANSISTOR UNIVERSAL MOSFET SOT |
| BUK553-100B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK553-48C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Voltage clamped logic level FET |
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