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參數(shù)資料
| 型號(hào)： | BUK465-100A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | BUK465-100A |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK465-100A
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 13 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
BUK455-100A
VGS / V
50
40
30
20
10
0
Tj / C =
25
150
ID / A
-60
-20
20
60
Tj / C
100
140
180
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
20
40
BUK455-100A
ID / A
gfs / S
15
10
5
0
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-20
20
60
100
140
180
Tj / C
Normalised RDS(ON) = f(Tj)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000
BUK4y5-100
February 1996
4
Rev 1.000
相關(guān)PDF資料 |
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|---|---|
| BUK465-200A | PowerMOS transistor |
| BUK465-60A | PowerMOS transistor |
| BUK465-60H | PowerMOS transistor |
| BUK466-100A | PowerMOS transistor |
| BUK466-200A | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK465-200A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK465-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK465-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK466-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK466-200A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
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