參數(shù)資料
型號: BUK451-100B
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 3 A, 100 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 3/7頁
文件大?。?/td> 48K
代理商: BUK451-100B
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D=
D =
t
p
t
p
T
T
P
D
t
0
20
40
60
80
Ths / C
100
120
140
160
180
ID / %
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
A
B
0
4
8
12
16
20
VDS / V
ID / A
BUK4y1-100
10
8
6
4
2
0
5
6
7
8
9
10
15
VGS / V =
1
100
VDS / V
ID / A
100
10
1
0.1
RDS(ON)=VDSID
DC
BUK451-100
10
B
A
100 us
1 ms
10 ms
100 ms
10 us
tp =
0
2
4
6
8
10
VDS / V
ID / A
BUK4y1-100
5
4
3
2
1
0
8
9
10
15
7
6
5
VGS / V =
January 1980
相關(guān)PDF資料
PDF描述
BUK452-100A PowerMOS transistor
BUK452-100B PowerMOS transistor
BUK453-60A PowerMOS transistor
BUK453-60 PowerMOS transistor
BUK453-60B PowerMOS transistor
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