參數(shù)資料
型號(hào): BUK451-100A
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: PowerMOS transistor
中文描述: 3 A, 100 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 48K
代理商: BUK451-100A
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
3.75
UNIT
K/W
R
th j-a
-
60
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
100
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 100 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
30 V; V
DS
= 0 V
V
GS
= 10 V;
I
D
2.1
-
-
-
-
-
3.0
1
0.1
10
0.75
0.90
4.0
10
1.0
100
0.85
1.10
V
μ
A
mA
nA
BUK451-100A
BUK451-100B
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 2.5 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
1.3
-
-
-
-
-
-
-
-
TYP.
1.7
160
45
16
4
15
10
10
3.5
MAX.
-
240
60
25
6
25
20
20
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 10 V; R
GS
= 50
;
R
gen
= 50
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
3.0
UNIT
A
-
I
F
= 3.0 A ; V
GS
= 0 V
I
F
= 3.0 A; -dI
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
-
-
12
1.4
-
-
A
V
ns
μ
C
1.1
100
0.25
January 1980
相關(guān)PDF資料
PDF描述
BUK451-100B PowerMOS transistor
BUK452-100A PowerMOS transistor
BUK452-100B PowerMOS transistor
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BUK453-60 PowerMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK451-100B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
BUK451-60A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-220AB
BUK451-60B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-220AB
BUK452-100A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
BUK452-100B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor