參數(shù)資料
型號: BUK446-800A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 2 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝: TO-220, 3 PIN
文件頁數(shù): 6/7頁
文件大小: 64K
代理商: BUK446-800A
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.15. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
2.54
5.08
0.9
0.7
1
2
3
M
0.4
top view
3.5 max
not tinned
4.4
May 1995
6
Rev 1.200
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