參數(shù)資料
型號(hào): BUK215-50Y
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: TOPFET high side switch SMD version of BUK210-50Y
中文描述: 9 A BUF OR INV BASED PRPHL DRVR, PSSO4
封裝: PLASTIC, SOT-426, D2PAK-5
文件頁(yè)數(shù): 3/13頁(yè)
文件大?。?/td> 201K
代理商: BUK215-50Y
Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK210-50Y
BUK215-50Y
STATIC CHARACTERISTICS
Limits are at -40C
T
mb
150C and typicals at T
mb
= 25 C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
Battery to ground
Battery to load
Negative load to ground
Negative load voltage
1
V
BG
V
BL
-V
LG
-V
LG
I
G
= 1 mA
I
L
= I
G
= 1 mA
I
L
= 10 mA
I
L
= 10 A; t
p
= 300
μ
s
50
50
18
20
55
55
23
25
65
65
28
30
V
V
V
V
Supply voltage
Operating range
2
battery to ground
V
BG
5.5
-
35
V
Currents
Quiescent current
3
9 V
V
BG
16 V
V
LG
= 0 V
I
B
-
-
-
-
-
9
-
20
2
20
1
4
-
μ
A
μ
A
μ
A
μ
A
mA
A
T
mb
= 25C
0.1
-
0.1
2
-
I
L
Off-state load current
4
V
BL
= V
BG
T
mb
= 25C
I
G
I
L
Operating current
5
Nominal load current
6
I
L
= 0 A
V
BL
= 0.5 V
T
mb
= 85C
Resistances
V
BG
I
L
t
p
7
T
mb
R
ON
On-state resistance
9 to 35 V
10 A
300
μ
s
25C
150C
25C
150C
-
-
-
-
28
-
36
-
38
70
48
88
m
m
m
m
R
ON
On-state resistance
6 V
10 A
300
μ
s
R
G
Internal ground resistance
I
G
= 10 mA
95
150
190
1
For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2
On-state resistance is increased if the supply voltage is less than 9 V.
3
This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4
The measured current is in the load pin only.
5
This is the continuous current drawn from the supply with no load connected, but with the input high.
6
Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7
The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
May 2001
3
Rev 1.010
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