參數(shù)資料
型號(hào): BUK139-50DL
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: Logic level TOPFET D-PAK version of BUK118-50DL
中文描述: BUF OR INV BASED PRPHL DRVR, PSSO2
封裝: PLASTIC, SOT-428, DPAK-3
文件頁數(shù): 3/6頁
文件大?。?/td> 36K
代理商: BUK139-50DL
Philips Semiconductors
Product specification
Logic level TOPFET
D-PAK version of BUK118-50DL
BUK139-50DL
OUTPUT CHARACTERISTICS
Limits are for -40C
T
mb
150C; typicals are for T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Off-state
V
IS
= 0 V
I
D
= 10 mA
I
DM
= 2 A; t
p
300
μ
s;
δ
0.01
V
DS
= 40 V
V
(CL)DSS
Drain-source clamping voltage
50
-
-
V
50
60
70
V
I
DSS
Drain source leakage current
-
-
-
100
10
μ
A
μ
A
T
mb
= 25 C
0.1
On-state
I
DM
= 6 A; t
p
300
μ
s;
δ
0.01
V
IS
4.4 V
R
DS(ON)
Drain-source resistance
-
-
-
-
-
95
50
100
55
m
m
m
m
T
mb
= 25 C
36
-
39
V
IS
4 V
T
mb
= 25 C
OVERLOAD CHARACTERISTICS
-40C
T
mb
150C unless otherwise specified.
SYMBOL
PARAMETER
Short circuit load
I
D
Drain current limiting
CONDITIONS
V
DS
= 13 V
V
= 5 V;
4.4 V
V
IS
5.5 V
4 V
V
IS
5.5 V
V
IS
= 5 V;T
mb
= 25C
device trips if P
D
> P
D(TO)
which determines trip time
1
MIN.
TYP.
MAX.
UNIT
T
mb
= 25C
16
12
8
24
-
-
32
36
36
A
A
A
Overload protection
Overload power threshold
Characteristic time
P
D(TO)
T
DSC
40
200
120
350
160
600
W
μ
s
Overtemperature protection
Threshold junction
temperature
2
T
j(TO)
150
170
-
C
1
Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
T
DSC
/ ln[ P
D
/ P
D(TO)
].
2
This is independent of the dV/dt of input voltage V
IS
.
July 2001
3
Rev 2.000
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