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參數(shù)資料
| 型號： | BUK111-50GL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Logic level TOPFET SMD version of BUK112-50GL |
| 中文描述： | 12 A, 50 V, 0.093 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 93K |
| 代理商： | BUK111-50GL |
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
PROTECTION SUPPLY CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Normal operation or
protection latched
I
PS
, I
PSL
Supply current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
PS
= 4.5 V
-
-
6
330
-
7.1
400
450
-
μ
A
μ
A
V
-40C
≤
T
mb
≤
150C
V
(CL)PS
Clamping voltage
I
P
= 1.5 mA
Overload protection latched
V
PSR
Reset voltage
-
2.1
-
25
-
-
3
-
V
V
μ
s
μ
s
-40C
≤
T
mb
≤
150C
1.5
-
-
t
pr
Reset time
V
PS
= 0 V
-40C
≤
T
mb
≤
150C
150
OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS
An open circuit load condition can be detected while the TOPFET is in the off-state.
-40C
≤
T
mb
≤
150C; V
PS
= 5 V; V
DS
= 13 V unless otherwise specified
SYMBOL
PARAMETER
I
DSP
Off-state drain current
1
I
DSF
Off-state drain threshold current V
IS
= 0 V; I
F
= 100
μ
A
V
ISF
Input threshold voltage
2
CONDITIONS
V
IS
= 0 V
MIN.
0.5
0.4
TYP.
1.4
1.1
MAX.
2
-
UNIT
mA
mA
I
F
= 100
μ
A; I
D
= 100
μ
A;
T
mb
= 25 C
-
1.2
-
V
TRUTH TABLE
For normal, open-circuit load and overload conditions or inadequate protection supply voltage.
CONDITION
PROTECTION
INPUT
FLAG
OUTPUT
Normal on-state
1
1
0
1
Normal off-state
1
0
0
0
Open circuit load
1
1
0
1
Open circuit load
1
0
1
0
Short circuit load
1
1
1
0
Over temperature
1
X
1
0
Low protection supply voltage
0
1
1
1
Low protection supply voltage
0
0
1
0
For protection ‘0’ equals low, ‘1’ equals high.
For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care.
For flag ‘0’ equals low, ‘1’ equals open or high.
For output switch ‘0’ equals off, ‘1’ equals on.
1
The drain source current which flows when the protection supply is high and the input is low.
2
For open circuit load indication, V
IS
must be less than V
ISF
.
September 1996
4
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK112-50GL | N-Channel Enhancement MOSFET |
| BUK113-50DL | N-Channel Enhancement MOSFET |
| BUK114-50L | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK114-50S | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK116-50L | Logic level TOPFET SMD version of BUK106-50L/S(BUK106-50L/S版本的邏輯電平TOPFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK112-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK113-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK114-50L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level TOPFET |
| BUK114-50L /T3 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK114-50L,118 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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