- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369562 > BUK109-50GL (NXP SEMICONDUCTORS) PowerMOS transistor Logic level TOPFET(功率MOS場效應(yīng)管邏輯電平TOPFET) PDF資料下載
參數(shù)資料
| 型號： | BUK109-50GL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS場效應(yīng)管邏輯電平TOPFET) |
| 中文描述： | 26 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK, 3 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BUK109-50GL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK109-50GL
Fig.20. Test circuit for resistive load switching times.
Fig.21. Typical switching waveforms, resistive load.
V
DD
= 13 V; R
L
= 2.1
; R
I
= 50
, T
j
= 25 C.
Fig.22. Typical switching waveforms, resistive load.
V
DD
= 13 V; R
L
= 2.1
; R
I
= 50
, T
j
= 25 C.
Fig.23. Test circuit for inductive load switching times.
Fig.24. Typical switching waveforms, inductive load.
V
DD
= 10 V; I
D
= 6 A; R
I
= 50
, T
j
= 25 C.
Fig.25. Typical switching waveforms, inductive load.
V
DD
= 10 V; I
D
= 6 A; R
I
= 50
, T
j
= 25 C.
VDD
D.U.T.
R
0V
0R1
I
VIS
ID measure
D
S
I
TOPFET
P
RL
: adjust for correct ID
VDD = VCL
LD
D.U.T.
R
0V
tp
0R1
I
VIS
ID measure
D
S
I
TOPFET
P
0
20
40
RESISTIVE TURN-ON
time / us
BUK109-50GL
15
10
5
0
10
30
50
10%
90%
VDS / V
VIS / V
ID / A
tr
td on
0
20
40
INDUCTIVE TURN-ON
time / us
BUK109-50GL
15
10
5
0
30
50
10
10%
90%
tr
td on
VDS / V
ID / A
VIS / V
0
10
20
RESISTIVE TURN-OFF
time / us
BUK109-50GL
15
10
5
0
5
15
VDS / V
ID / A
VIS / V
90%
90%
10%
td off
tf
0
10
20
INDUCTIVE TURN-OFF
time / us
BUK109-50GL
15
10
5
0
ID / A
VDS / V
VIS / V
5
15
90%
90%
10%
td off
tf
June 1996
8
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK109-50GS | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
| BUK111-50GL | Logic level TOPFET SMD version of BUK112-50GL |
| BUK112-50GL | N-Channel Enhancement MOSFET |
| BUK113-50DL | N-Channel Enhancement MOSFET |
| BUK114-50L | Logic level TOPFET SMD version of BUK104-50L/S |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK109-50GS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PowerMOS transistor TOPFET |
| BUK110-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK110-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK110-50GL /T3 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK110-50GL,118 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。