- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376498 > BUK104-50S (NXP SEMICONDUCTORS) PowerMOS transistor Logic level TOPFET PDF資料下載
參數(shù)資料
| 型號： | BUK104-50S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET |
| 中文描述： | 40 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263, SEP-5 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 147K |
| 代理商： | BUK104-50S |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK104-50L/S
BUK104-50LP/SP
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
I
DRRM
Repetitive peak clamping drain current R
IS
≥
100
1
E
DSM
Non-repetitive inductive turn-off
I
DM
= 15 A; R
IS
≥
100
energy
2
E
DRM
Repetitive inductive turn-off energy
R
IS
≥
100
; T
mb
≤
95 C;
I
= 4 A; V
DD
≤
20 V;
f = 250 Hz
I
DIRM
Repetitive peak drain to input current
3
R
IS
= 0
; t
p
≤
1 ms
MIN.
-
-
MAX.
15
200
UNIT
A
mJ
-
20
mJ
-
50
mA
REVERSE DIODE LIMITING VALUE
SYMBOL
I
S
PARAMETER
Continuous forward current
CONDITIONS
T
mb
= 25 C;
V
IS
= V
PS
= V
FS
= 0 V
MIN.
-
MAX.
15
UNIT
A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance
Junction to mounting base
Junction to ambient
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
R
th j-a
-
-
-
2.5
60
3.1
-
K/W
K/W
in free air
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(CL)DSR
Drain-source clamping voltage
V
(CL)DSR
Drain-source clamping voltage
CONDITIONS
R
IS
= 100
; I
D
= 10 mA
R
IS
= 100
; I
DM
= 1 A; t
p
≤
300
μ
s;
δ
≤
0.01
MIN.
50
50
TYP.
-
-
MAX.
65
70
UNIT
V
V
I
DSS
I
DSR
I
DSR
Zero input voltage drain current V
DS
= 12 V; V
IS
= 0 V
Drain source leakage current
Drain source leakage current
-
-
0.5
1
10
20
μ
A
μ
A
V
DS
= 50 V; R
IS
= 100
;
V
DS
= 40 V; R
IS
= 100
;
T
j
= 125 C
V
IS
= 7 V
V
IS
= 5 V
-
-
-
10
75
95
100
100
125
μ
A
m
m
R
DS(ON)
Drain-source on-state
resistance
I
DM
= 7.5 A;
t
p
≤
300
μ
s;
δ
≤
0.01
1
The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to
become sufficiently positive for active clamping. Refer to INPUT CHARACTERISTICS.
2
While the protection supply voltage is connected, during overvoltage clamping it is possible that the overload protection may operate at
energies close to the limiting value. Refer to OVERLOAD PROTECTION CHARACTERISTICS.
3
Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source
voltage becoming positive.
January 1993
3
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK104-50SP | PowerMOS transistor Logic level TOPFET |
| BUK139-50DL | Logic level TOPFET D-PAK version of BUK118-50DL |
| BUK202-50 | XTAL CER SMT 6X3.5 2PAD |
| BUK436-800A | PowerMOS transistor |
| BUK446-800A | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK104-50SP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK105-50L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK105-50LP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 26A I(D) | SOT-263 |
| BUK105-50S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK105-50SP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 26A I(D) | SOT-263 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。