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參數資料
| 型號： | BUK104-50L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET |
| 中文描述： | 40 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263, SEP-5 |
| 文件頁數： | 2/14頁 |
| 文件大?。?/td> | 147K |
| 代理商： | BUK104-50L |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK104-50L/S
BUK104-50LP/SP
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
Voltages
V
DSS
Continuous off-state drain source
voltage
1
V
IS
Continuous input voltage
V
FS
Continuous flag voltage
V
PS
Continuous supply voltage
Currents
I
D
Continuous drain current
I
D
Continuous drain current
I
DRM
Repetitive peak on-state drain current
Thermal
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
2
T
sold
Lead temperature
CONDITIONS
MIN.
MAX.
UNIT
V
IS
= 0 V
-
50
V
-
-
-
0
0
0
-
-
-
-
11
11
11
V
V
V
V
A
A
A
V
IS
=
7
5
13
8.5
54
T
mb
≤
25 C
T
mb
≤
100 C
T
mb
≤
25 C
15
9.5
60
T
mb
= 25 C
-
continuous
during soldering
-
40
150
150
250
W
C
C
C
-55
-
-
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply
connected, TOPFET can protect
itself from two types of overload -
over temperature and short circuit
load.
SYMBOL
PARAMETER
An n-MOS transistor turns on
between the input and source to
quickly discharge the power
MOSFET gate capacitance.
For internal overload protection to
remain latched while the control
circuit is high, external series input
resistance must be provided. Refer
to INPUT CHARACTERISTICS.
MIN.
MAX.
V
IS
=
7
5
CONDITIONS
UNIT
V
-
V
PSP
Protection supply voltage
3
for valid protection
BUK104-50L
BUK104-50S
4.4
5.4
4
5
-
-
V
V
Over temperature protection
Protected drain source supply voltage
V
PS
= V
PSN
V
IS
= 10 V; R
I
≥
2 k
V
IS
= 5 V; R
I
≥
1 k
V
PS
= V
PSN
; L
≤
10
μ
H
V
DDP(T)
-
-
50
50
V
V
Short circuit load protection
Protected drain source supply voltage
4
V
IS
= 10 V; R
I
≥
2 k
V
DDP(P)
-
-
-
25
45
0.8
V
V
V
IS
= 5 V; R
I
≥
1 k
P
DSM
Instantaneous overload dissipation
kW
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
The minimum supply voltage required for correct operation of the overload protection circuits.
4
The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
DDP(P)
maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
January 1993
2
Rev 1.200
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| BUK104-50LP | PowerMOS transistor Logic level TOPFET |
| BUK104-50S | PowerMOS transistor Logic level TOPFET |
| BUK104-50SP | PowerMOS transistor Logic level TOPFET |
| BUK139-50DL | Logic level TOPFET D-PAK version of BUK118-50DL |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUK104-50LP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50S | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK104-50SP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK105-50L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK105-50LP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 26A I(D) | SOT-263 |
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