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參數(shù)資料
| 型號： | BUK100-50DL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| 中文描述： | 13.5 A, 50 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 84K |
| 代理商： | BUK100-50DL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50DL
Fig.12. Typical clamping characteristics, 25 C.
I
D
= f(V
DS
); conditions: V
IS
= 0 V; t
p
≤
50
μ
s
Fig.13. Input threshold voltage.
V
IS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= 5 V
Fig.14. Typical DC input characteristics, T
= 25 C.
I
ISL
& I
IS
= f(V
IS
); protection latched & normal operation
Fig.15. Typical reverse diode current, T
= 25 C.
I
S
= f(V
SDS
); conditions: V
IS
= 0 V; t
p
= 250
μ
s
Fig.16. Test circuit for resistive load switching times.
Fig.17. Typical switching waveforms, resistive load.
V
DD
= 13 V; R
L
= 4
; R
I
= 50
, T
j
= 25 C.
50
60
70
BUK100-50DL
VDS / V
ID / A
20
15
10
5
0
typ.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
BUK100-50DL
VSD / V
IS / A
60
50
40
30
20
10
0
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VIS(TO) / V
2
1
0
max.
typ.
min.
VDD
D.U.T.
R
0V
0R1
I
ID measure
D
S
I
TOPFET
P
RL
0
2
4
6
VIS / V
IISL & IIS / uA
BUK100-50DL
600
500
400
300
200
100
0
RESET
PROTECTION LATCHED
NORMAL
IISL
IIS
0
100
200
300
400
time / us
VIS / V & VDS / V
BUK100-50DL
10
5
0
VIS
VDS
November 1996
7
Rev 1.200
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PDF描述 |
|---|---|
| BUK100-50GL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK100-50GS | PowerMOS transistor TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50DL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50GL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50GS | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK100-50GL | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK100-50GL,127 | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK100-50GS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET |
| BUK101-50 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK101-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
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