參數(shù)資料
型號(hào)： BUJ303A
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： NPN power transistor
封裝： BUJ303A<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁數(shù)： 6/14頁
文件大小： 579K
代理商： BUJ303A
BUJ303A
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 3 May 2011
6 of 14
NXP Semiconductors
BUJ303A
NPN power transistor
6.
Characteristics
[1]
Measured with half-sine wave voltage (curve tracer).
Table 6.
Symbol
Static characteristics
I
CES
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter cut-off
current
V
BE
= 0 V; V
CE
= 1000 V; T
mb
= 25 °C
V
BE
= 0 V; V
CE
= 1000 V; T
j
= 125 °C
[1]
-
-
-
-
-
-
-
-
1
2
1
0.1
mA
mA
mA
mA
[1]
I
CBO
I
CEO
collector-base cut-off current V
CB
= 1000 V; I
E
= 0 A; T
mb
= 25 °C
collector-emitter cut-off
current
emitter-base cut-off current
V
EB
= 9 V; I
C
= 0 A; T
mb
= 25 °C
collector-emitter sustaining
voltage
T
mb
= 25 °C; see
Figure 6
;
see
Figure 7
collector-emitter saturation
voltage
see
Figure 8
; see
Figure 9
base-emitter saturation
voltage
see
Figure 10
DC current gain
I
C
= 5 mA; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
I
C
= 500 mA; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
[1]
V
CE
= 500 V; I
B
= 0 A; T
mb
= 25 °C
[1]
I
EBO
V
CEOsus
-
500
-
-
0.1
-
mA
V
I
B
= 0 A; I
C
= 100 mA; L
C
= 25 mH;
V
CEsat
I
C
= 3 A; I
B
= 0.6 A; T
mb
= 25 °C;
-
0.25
1.5
V
V
BEsat
I
C
= 3 A; I
B
= 0.6 A; T
mb
= 25 °C;
-
0.97
1.3
V
h
FE
10
22
35
14
25
35
h
FEsat
DC saturation current gain
I
C
= 2.5 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
I
C
= 3 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
10
13.5
17
-
12
-
Dynamic characteristics
t
on
t
s
turn-on time
storage time
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
; V
BB
= -4 V; T
mb
= 25 °C;
resistive load; see
Figure 12
;
see
Figure 13
I
C
= 2.5 A; I
Bon
= 0.5 A; V
BB
= -5 V;
L
B
= 1 μH; T
mb
= 25 °C; inductive
load; see
Figure 14
; see
Figure 15
I
C
= 2.5 A; I
Bon
= 0.5 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 100 °C; inductive load;
see
Figure 14
; see
Figure 15
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
; V
BB
= -4 V; T
mb
= 25 °C;
resistive load; see
Figure 12
;
see
Figure 13
I
C
= 2.5 A; I
Bon
= 0.5 A; V
BB
= -5 V;
L
B
= 1 μH; T
mb
= 25 °C; inductive
load; see
Figure 14
; see
Figure 15
I
C
= 2.5 A; I
Bon
= 0.5 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 100 °C; inductive load;
see
Figure 14
; see
Figure 15
-
-
0.5
3.3
0.7
4
μs
μs
-
1.4
1.6
μs
-
1.7
1.9
μs
t
f
fall time
-
0.33
0.45
μs
-
145
160
ns
-
160
200
ns
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