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參數資料
| 型號： | BUJ105AB |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor |
| 封裝： | BUJ105AB<SOT404 (D2PAK)|<<http://www.nxp.com/packages/SOT404.html<1<week 1, 2005,; |
| 文件頁數： | 2/9頁 |
| 文件大?。?/td> | 143K |
| 代理商： | BUJ105AB |
NXP
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ105AB
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D
2
-PAK) surface-mount
package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching
regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
V
BE
= 0 V
-
-
-
-
-
-
700
700
400
8
16
125
1.0
15
50
V
V
V
A
A
W
V
T
mb
≤
25 C
I
C
B
= 0.8 A
I
C
= 4.0 A; V
= 5 V
I
C
= 5 A; I
B1
= 1 A
0.3
11
20
Fall time
ns
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
mb
collector
LIMITING VALUES8
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
V
CEO
V
CBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
V
BE
= 0 V
-
-
-
-
-
-
-
-
700
400
700
8
16
4
8
125
150
150
V
V
V
A
A
A
A
W
C
C
T
mb
≤
25 C
-65
-
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to mounting
base
-
1.0
K/W
R
th j-a
Thermal resistance junction to ambient
minimum footprint, FR4 board
55
-
K/W
1
3
mb
2
b
c
e
October 2001
1
Rev 1.000
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BUJ105AB,118 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 8A 3-Pin(2+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ105AD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistor |
| BUJ105AD,118 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 8A 3-Pin(2+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ105AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ106A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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