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參數(shù)資料
| 型號(hào)： | BUJ105A |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor |
| 封裝： | BUJ105A<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 133K |
| 代理商： | BUJ105A |
NXP
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ105A
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Collector cut-off current
1
I
CES
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
,I
CBO
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
CEO
= V
(400V)
V
= 9 V; I
= 0 A
I
= 0 A; I
C
= 10 mA;
L = 25 mH
I
C
= 4.0 A;I
B
= 0.8 A
I
C
= 4.0 A;I
B
= 0.8 A
I
C
= 1 mA; V
= 5 V
I
C
= 500 mA; V
= 5 V
I
C
= 4.0 A; V
CE
= 5 V
-
-
-
-
0.2
0.5
mA
mA
I
CEO
I
EBO
V
CEOsust
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
-
-
0.1
1
-
mA
mA
V
400
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
0.3
1.0
14
23
11
1.0
1.5
34
36
15
V
V
10
13
8
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con
= 5 A; I
= -I
Boff
= 1 A;
R
L
= 75 ohms; V
BB2
= 4 V;
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
0.65
1.8
0.3
1
μ
s
μ
s
μ
s
2.5
0.5
Switching times (inductive load)
I
= 5 A; I
Bon
= 1 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
1.2
20
1.7
50
μ
s
ns
Switching times (inductive load)
I
= 5 A; I
= 1 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
= 100 C
t
s
t
f
Turn-off storage time
Turn-off fall time
1.4
25
1.9
100
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000
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| BUJ105A,127 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ105A127 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BUJ105AB | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ105AB,118 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 8A 3-Pin(2+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ105AD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistor |
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