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參數(shù)資料
| 型號： | BUH615D |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開關(guān)NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開關(guān)晶體管（高電壓快速開關(guān)npn型功率晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 64K |
| 代理商： | BUH615D |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
2.3
o
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1500 V
V
CE
= 1500 V T
j
= 125
o
C
0.2
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
V
EB
= 5 V
300
mA
V
CE(sat)
I
C
= 6 A I
B
= 2.5 A
1.5
V
V
BE(sat)
I
C
= 6 A I
B
= 2.5 A
1.3
V
h
FE
I
C
= 6 A V
CE
= 5 V
V
CC
= 400 V I
C
= 6 A
I
B1
= 1.5 A I
B2
= -3 A
4
9
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
2.7
190
3.9
280
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 6 A f = 15625 Hz
I
B1
= 1.25 A I
B2
= -3 A
V
ceflyback
= 1050 sin
π
10 10
6
t V
2.3
350
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 6 A f = 31250 Hz
I
B1
= 1.5 A I
B2
= -3 A
V
ceflyback
= 1200 sin
π
5 10
6
t V
2.3
200
μ
s
ns
V
f
Diode Forward Voltage
IF = 5 A
2
V
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BUH615D
2/4
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