參數(shù)資料
型號(hào): BUH515
廠商: 意法半導(dǎo)體
英文描述: High Voltage Fast-Switching NPN Power Transistor(高電壓快速開關(guān)NPN功率晶體管)
中文描述: 高壓快速NPN電源開關(guān)晶體管(高電壓快速開關(guān)npn型功率晶體管)
文件頁數(shù): 4/7頁
文件大?。?/td> 98K
代理商: BUH515
PowerLosses at 32 KHz
Switching Time InductiveLoad at 32 KHz
(see figure 2)
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
B1
has to be provided for the lowest gain h
FE
at
100
negative base current I
B2
must be provided to
turn off the power transistor (retrace phase).
Most
of
the
dissipation,
application, occurs at switch-off. Therefore it is
essential to determine the value of I
B2
which
minimizes
power
losses,
consequently,T
j
. A new set of curves have been
defined to give total power losses, t
s
and t
f
as a
function of I
B2
at both 16 KHz and 32 KHz
scanning frequencies for choosing the optimum
negative drive. The test circuit is illustrated in
o
C (line scan phase). On the other hand,
in
the
deflection
fall
time
t
f
and,
figure 1.
Inductance L
1
serves to control the slope of the
negative base current I
B2
to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenonin thecollector current.
The values of L and C are calculated from the
following equations:
1
2L
(
I
C
)
2
=
1
Where I
C
= operating collector current, V
CEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
2C
(
V
CEfly
)
2
ω =
2
π
f
=
1
L
C
BASE DRIVE INFORMATION
ReverseBiased SOA
Switching Time Resistive Load
BUH515
4/7
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