- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄384160 > BUH315 (意法半導(dǎo)體) High Voltage Fast-Switching NPN Power Transistor(高電壓快速開(kāi)關(guān)NPN功率晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | BUH315 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開(kāi)關(guān)NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開(kāi)關(guān)晶體管（高電壓快速開(kāi)關(guān)npn型功率晶體管） |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | BUH315 |
PowerLosses at 32 KHz
Switching Time InductiveLoad at 32 KHz
(see figure 2)
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
B1
has to be provided for the lowest gain h
FE
at
100
negative base current I
B2
must be provided to
turn off the power transistor (retrace phase).
Most
of
the
dissipation,
application, occurs at switch-off. Therefore it is
essential to determine the value of I
B2
which
minimizes
power
losses,
consequently,T
j
. A new set of curves have been
defined to give total power losses, t
s
and t
f
as a
function of I
B2
at both 16 KHz and 32 KHz
scanning frequencies for choosing the optimum
negative drive. The test circuit is illustrated in
o
C (line scan phase). On the other hand,
in
the
deflection
fall
time
t
f
and,
figure 1.
Inductance L
1
serves to control the slope of the
negative base current I
B2
to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenonin thecollector current.
The values of L and C are calculated from the
following equations:
1
2L
(
I
C
)
2
=
1
Where I
C
= operating collector current, V
CEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
2C
(
V
CEfly
)
2
ω =
2
π
f
=
1
√
L
C
BASE DRIVE INFORMATION
ReverseBiased SOA
BUH315
4/7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUH515D | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開(kāi)關(guān)NPN功率晶體管) |
| BUH515FP | High Voltage Fast-Switching NPN Power Transistor(高壓快速開(kāi)關(guān)NPN功率晶體管) |
| BUH515 | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開(kāi)關(guān)NPN功率晶體管) |
| BUH517 | CRT HORIZONTAL DEFLECTION HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR |
| BUH615D | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開(kāi)關(guān)NPN功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUH315D | 制造商:STMicroelectronics 功能描述: |
| BUH315DFH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUH417 | 制造商:STMicroelectronics 功能描述: |
| BUH417D | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BUH50 | 功能描述:兩極晶體管 - BJT 4A 500V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。