參數(shù)資料
型號(hào): BU52001GUL-E2
廠商: Rohm Semiconductor
文件頁數(shù): 11/34頁
文件大?。?/td> 678K
描述: IC HALL EFFECT SW BIPO VCSP50L1
特色產(chǎn)品: ROHM Hall Effect Sensor ICs
標(biāo)準(zhǔn)包裝: 1
傳感范圍: ±5.5mT 跳閘,±0.8mT 釋放
類型: 全極開關(guān)
電源電壓: 2.4 V ~ 3.3 V
電流 - 電源: 12µA
電流 - 輸出(最大): ±1mA
輸出類型: 數(shù)字,開路集電極
工作溫度: -40°C ~ 85°C
封裝/外殼: 4-UFBGA,CSPBGA
供應(yīng)商設(shè)備封裝: VCSP50L1
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁面: 1377 (CN2011-ZH PDF)
其它名稱: BU52001GUL-E2DKR
Technical Note
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52053NVX,
BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
 
11/31
www.rohm.com
2011.12 - Rev.G
?2011 ROHM Co., Ltd. All rights reserved.
 
BU52021HFV,BU52025G (Unless otherwise specified, V
DD
=3.0V, Ta=25)
Parameter
Symbol
Limits
Unit
Conditions
Min.
Typ.
Max.
Power Supply Voltage
V
DD
 
2.4
3.0
3.6
V     
Operate Point
B
opS
 
-
3.7
5.5
mT
 
B
opN
 
-5.5
-3.7
-
 
Release Point
B
rpS
 
0.8
2.9
-
mT
 
B
rpN
 
-
-2.9
-0.8
 
Hysteresis
B
hysS
 
-
0.8
-
mT
 
B
hysN
 
-
0.8
-
 
Period
T
p
 
-
50
100
ms    
Output High Voltage
V
OH
 
V
DD
-0.4
-
-
V
B
rpN
<B
rpS
 
;
25
 
I
OUT
 =-1.0mA
Output Low Voltage
V
OL
 
-
-
0.4
V
B
opN
, B
opS
<B
;
25
 
I
OUT
 =+1.0mA
Supply Current
I
DD(AVG)
-
8
12
礎(chǔ)    Average
Supply Current During Startup Time
I
DD(EN)
 
-
4.7
-
mA    During Startup Time Value
Supply Current During Standby Time
I
DD(DIS)
 
-
3.8
-
礎(chǔ)    During Standby Time Value
;25 B = Magnetic flux density
 
1mT=10Gauss
 
Positive (+) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
 
After applying power supply, it takes one cycle of period (T
P
) to become definite output.
 
Radiation hardiness is not designed.
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