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參數(shù)資料
| 型號： | BU508DW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, SOT-429, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 67K |
| 代理商： | BU508DW |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DW
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
I
= 0 A; I
C
= 100 mA;
L = 25 mH
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
V
CEOsust
Collector-emitter sustaining voltage
700
-
-
V
V
CEsat
V
BEsat
h
FE
V
F
Collector-emitter saturation voltages I
C
= 4.5 A; I
B
= 1.6 A
Base-emitter saturation voltage
DC current gain
Diode forward voltage
-
-
6
-
-
-
1.0
1.1
30
2.0
V
V
I
C
= 4.5 A; I
= 2 A
I
C
= 100 mA; V
CE
= 5 V
I
F
= 4.5 A
13
1.6
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
f
T
Transition frequency at f = 5 MHz
C
C
Collector capacitance at f = 1MHz
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
C
= 0.1 A;V
CE
= 5 V
V
CB
= 10 V
I
Csat
= 4.5 A;L
= 1 mH;C
= 4 nF
I
B(end)
= 1.4 A; L
B
= 6
μ
H; -V
BB
= -4 V;
TYP.
7
125
MAX.
-
-
UNIT
MHz
pF
6.5
0.7
-
-
μ
s
μ
s
1
Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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