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參數(shù)資料
| 型號(hào)： | BU508D |
| 英文描述： | HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓FASTSWITCHING NPN電源晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | BU508D |
THERMAL DATA
TO-3
TO-218
ISOWATT218
R
thj-case
Thermal Resistance Junction-case
Max
1
1
2.5
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwisespecified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1500 V
V
CE
= 1500 V
T
j
= 125
o
C
1
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Collector-Emitter
Sustaining Voltage
Base-Emitter
Saturation Voltage
INDUCTIVE LOAD
Storage Time
Fall Time
V
EB
= 5 V
300
mA
V
CE(sat)
I
C
= 4.5 A
I
B
= 2 A
1
V
V
CEO(sus)
I
C
= 100 m A
700
V
V
BE(sat)
I
C
= 4.5 A
I
B
= 2 A
1.3
V
t
s
t
f
I
C
= 4.5 A
L
C
= 0.9 mH
h
FE
= 2.5
L
B
= 3
μ
H
V
CC
= 140 V
7
550
μ
s
ns
V
F
f
T
Diode Forward Voltage
I
F
= 4 A
I
C
= 0.1 A
2
V
Transition Frequency
V
CE
= 5 V
f = 5 MHz
7
MHz
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe OperatingArea (TO-3)
Safe OperatingArea (TO-218/ISOWATT218)
BU208D/508D/508DFI
2/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU508D | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-247 |
| BU508DF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU508DF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU508DF/B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
| BU508DF_12 | 制造商:COMSET 制造商全稱(chēng):Comset Semiconductor 功能描述:SILICON DIFFUSED POWER TRANSISTOR |
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