參數(shù)資料
型號(hào): BU508AX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 8 A, 700 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-399, 3 PIN
文件頁(yè)數(shù): 5/7頁(yè)
文件大小: 63K
代理商: BU508AX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AX
Fig.12. Forward bias safe operating area. T
hs
= 25C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30
±
5 newton force on the centre of
the envelope.
Fig.13. Forward bias safe operating area. T
hs
= 25C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30
±
5 newton force on the centre of
the envelope.
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
July 1998
5
Rev 1.200
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