參數(shù)資料
型號: BU505D
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 2.5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 2/12頁
文件大?。?/td> 74K
代理商: BU505D
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
DESCRIPTION
High-voltage, high-speed switching
NPN power transistor in a TO-220AB
package. The BU505D has an
integrated efficiency diode.
APPLICATIONS
Horizontal deflection circuits of
colour television receivers.
PINNING
PIN
DESCRIPTION
1
2
base
collector; connected to
mounting base
emitter
3
Fig.1 Simplified outline (TO-220AB) and symbols.
a. BU505.
b. BU505D.
MBK106
1 2 3
3
2
1
MBB008
3
2
1
MBB077
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
V
CEO
V
CEsat
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation
voltage
diode forward voltage
(BU505D)
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
V
BE
= 0
open base
I
C
= 2 A; I
B
= 900 mA
1500
700
1
V
V
V
V
F
I
F
= 2 A
1.8
V
I
Csat
I
C
I
CM
P
tot
t
f
0.9
2
2.5
4
75
A
A
A
W
μ
s
see Fig.3
see Fig.3
T
mb
25
°
C; see Fig.4
inductive load; see Fig.7
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
1.67
K/W
相關(guān)PDF資料
PDF描述
BU506F Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU506DF Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU506 Silicon diffused power transistors
BU506D Silicon diffused power transistors
BU5071
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