參數(shù)資料
型號: BU4515AF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴散功率型晶體管)
中文描述: 9 A, 800 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 1/7頁
文件大?。?/td> 41K
代理商: BU4515AF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4515AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
6.0
5.0
0.36
0.23
MAX.
1500
800
9
20
45
3.0
-
-
0.5
-
UNIT
V
V
A
A
W
V
A
A
μ
s
μ
s
T
hs
25 C
I
= 6.0 A; I
B
= 1.5 A
f = 16kHz
f = 64kHz
I
Csat
= 6A; f = 16kHz
I
Csat
= 5A;f = 64kHz
t
f
Fall time
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
9
20
5
7.5
6
45
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
2
3
case
b
c
e
1
Turn-off current.
June 1999
1
Rev 1.000
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