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參數(shù)資料
| 型號(hào)： | BU4508AZ |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-186A, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 58K |
| 代理商： | BU4508AZ |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AZ
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.0
4.0
0.35
0.17
MAX.
1500
800
8
15
32
3.0
-
-
0.48
-
UNIT
V
V
A
A
W
V
A
A
μ
s
μ
s
T
hs
≤
25 C
I
= 5.0 A; I
B
= 1.25 A
f= 16 kHz
f= 64 kHz
I
Csat
= 5.0 A; f= 16 kHz
I
Csat
= 4.0 A; f= 64 kHz
t
f
Fall time
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
8
15
4
6
5
32
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
With heatsink compound
in free air
TYP.
-
55
MAX.
4.0
-
UNIT
K/W
K/W
1 2 3
case
b
c
e
1
Turn-off current.
May 1998
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU4508DF | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4508DX | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4508DZ | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4508HG | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4508AF | Silicon Diffused Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU4508DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4508DX | 制造商:NXP Semiconductors 功能描述:800V 8A 45W Philips Transistor SOT-399 NPN |
| BU4508DZ | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4515AF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4515AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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