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參數(shù)資料
| 型號： | BU4507DZ |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 54K |
| 代理商： | BU4507DZ |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DZ
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
T
j
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
B
= 600 mA
V
= 6 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
V
CEOsust
Collector-emitter sustaining voltage
800
-
-
V
BV
EBO
R
be
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter saturation voltages I
C
= 4 A; I
B
= 1.0 A
Base-emitter saturation voltage
DC current gain
7.5
-
-
0.83
-
4.2
-
13.5
30
-
0.92
7
5.7
1.7
-
-
V
V
V
3.0
1.01
-
7.3
2.1
I
C
= 4 A; I
= 1.0 A
I
C
= 500 mA; V
= 5 V
I
C
= 4 A; V
CE
= 5 V
I
F
= 4 A
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
V
fr
Anti-parallel diode forward recovery
voltage
t
fr
Anti-parallel diode forward recovery
time
CONDITIONS
I
Csat
= 4 A; I
B1
= 0.8 A;(I
B2
= -2 A)
TYP.
MAX.
UNIT
3.7
300
18.5
4.6
400
-
μ
s
ns
V
I
F
= 4 A; dI
F
/dt = 50 A/
μ
s
V
F
= 5 V
500
-
ns
2
Measured with half sine-wave voltage (curve tracer).
January 1999
2
Rev 1.000
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