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參數(shù)資料
| 型號： | BU326A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE NPN SILICON POWER TRANSISTOR |
| 中文描述： | 高壓NPN硅功率晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 43K |
| 代理商： | BU326A |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
2.33
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off Current
(V
BE
= 0)
V
CE
= 900 V
V
CE
= 900 V T
c
= 125
o
C
1
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage(I
B
=
0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter Saturation
Voltage
h
FE
DC Current Gain
V
EB
= 10 V
10
mA
I
C
= 100 mA
400
V
I
C
= 2.5 A I
B
= 0.5 A
I
C
= 4 A I
B
= 1.25 A
1.5
3
V
V
I
C
= 2.5 A I
B
= 0.5 A
I
C
= 4 A I
B
= 1.25 A
I
C
= 1 A V
CE
= 5 V
1.4
1.6
V
25
t
on
Turn-on Time
I
C
= 2.5 A I
B1
= 0.5 A
V
CC
= 250 V
I
C
= 2.5 A I
B1
= 0.5 A
I
B2
= -1A A V
CC
= 250 V
0.5
μ
s
t
s
Storage Time
3.5
μ
s
t
f
Fall Time
I
C
= 2.5 A I
B1
= 0.5 A
I
B2
= -1A A V
CC
= 250 V
0.5
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BU326A
2/4
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