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參數(shù)資料
| 型號： | BU303AX |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 擴(kuò)散硅功率晶體管（硅擴(kuò)散功率型晶體管） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 74K |
| 代理商： | BU303AX |
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BUJ303AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.25
12
145
MAX.
1000
1000
500
5
10
32
1.5
-
160
UNIT
V
V
V
A
A
W
V
T
hs
≤
25 C
I
C
= 3 A; I
B
= 0.6 A
I
= 3 A; V
CE
= 5 V
Ic=2.5A,I
B1
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
500
1000
5
10
2
4
32
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
1 2 3
case
b
c
e
August 1998
1
Rev 1.000
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