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參數(shù)資料
| 型號(hào)： | BU2727AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| 中文描述： | 12 A, 825 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-399, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 67K |
| 代理商： | BU2727AX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AX
Fig.7. DC current gain. h
FE
= f (I
C
)
Parameter T
(Low and high gain)
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat
= f (I
C
); parameter I
C
/I
B
Fig.9. Typical base-emitter saturation voltage.
V
BEsat
= f (I
B
); parameter I
C
Fig.10. Normalised power dissipation.
PD% = 100
PD/PD 25C = f (T
hs
)
Fig.11. Transient thermal impedance.
Z
th
j-hs
= f(t); parameter D = t
p
/T
Fig.12. Test Circuit RBSOA.
V
= 150 V; -V
= 1 - 4 V;
L
C
= 1 mH; V
= 1500 V; L
= 0.5 - 2
μ
H;
C
FB
= 1 - 3 nF; I
B(end)
= 0.8 - 4 A
0.01
0.1
1
10
100
1
10
100
hFE
BU2727A/AF
IC / A
VCE = 1 V
Ths = 25 C
Ths = 85 C
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-06
1E-04
1E-02
t / s
1E+00
Zth / (K/W)
BU2525AF
10
1
0.1
0.01
0.001
D =
t
p
t
p
T
T
P
D
t
D = 0
0.02
0.05
0.1
0.2
0.5
0.1
1
10
100
0.01
0.1
1
10
BU2727A/AF
VCEsat / V
Ths = 85 C
Ths = 25 C
IC/IB = 12
IC/IB = 5
IC / A
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
0
1
2
3
4
0.6
0.7
0.8
0.9
1
VBEsat / V
BU2727A/AF
IB / A
IC = 6 A
4 A
Ths = 85 C
Ths = 25 C
September 1997
4
Rev 1.200
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