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參數(shù)資料
| 型號： | BU2720DX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 10 A, 825 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-399, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 73K |
| 代理商： | BU2720DX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2720DX
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
I
B
= 600 mA
V
= 6 V
I
C
= 5.5 A; I
B
= 1.38 A
I
C
= 5.5 A; I
B
= 1.38 A
I
F
= 5.5 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 5.5 A; V
CE
= 1 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
BV
EBO
R
BE
V
CEsat
V
BEsat
V
F
h
FE
h
FE
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
DC current gain
7.5
13.5
65
-
-
1.6
19
5.5
-
V
V
V
V
-
-
1.0
1.0
4
7.5
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16 kHz line
deflection circuit)
CONDITIONS
I
Csat
= 5.5 A; L
= 750
μ
H;
C
fb
= 15.5 nF; V
CC
= 125 V;
I
B(end)
= 1.2 A; L
B
μ
H; -V
BB
= 4 V;
-I
BM
= I
CM
/2
TYP.
MAX.
UNIT
t
s
t
f
Turn-off storage time
Turn-off fall time
7.4
0.7
8.5
0.9
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300
相關PDF資料 |
PDF描述 |
|---|---|
| BU2722AF | Silicon Diffused Power Transistor |
| BU2722 | Silicon Diffused Power Transistor |
| BU2722AX | Silicon Diffused Power Transistor |
| BU2722DF | Silicon Diffused Power Transistor |
| BU2722DX | TRANSISTOR | BJT | NPN | 825V V(BR)CEO | 10A I(C) | SOT-399 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BU2722 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2722AF | 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon Power Transistors |
| BU2722AX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2722DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2722DX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 825V V(BR)CEO | 10A I(C) | SOT-399 |
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