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參數(shù)資料
| 型號(hào)： | BU2708DX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 825 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-399, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 74K |
| 代理商： | BU2708DX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DX
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
I
B
= 600 mA
V
= 7.5 V
I
C
= 4 A; I
B
= 1.33 A
I
C
= 4 A; I
B
= 1.33 A
I
F
= 4 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 4 A; V
CE
= 1 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
BV
EBO
R
BE
V
CEsat
V
BEsat
V
F
h
FE
h
FE
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
DC current gain
7.5
13.5
45
-
0.91
1.6
15
6
-
V
V
V
V
-
1.0
1.00
0.83
-
3
-
7.3
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (line deflection
circuit 16 kHz)
CONDITIONS
I
Csat
= 4 A; L
= 1 mH; C
= 12.2 nF;
V
CC
= 120 V; I
B(end)
= 0.8 A; L
B
= 6
μ
H;
-V
BB
= 4 V; -I
BM
CM
/2
TYP.
MAX.
UNIT
t
s
t
f
Turn-off storage time
Turn-off fall time
4.8
0.4
5.5
0.52
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
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