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參數(shù)資料
| 型號(hào)： | BU2525DF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 71K |
| 代理商： | BU2525DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
EB
= 6.0 V; I
C
= 0 A
V
= 6.0 V
I
B
= 600 mA
I
=0A ;I
= 100mA
L = 25 mH
I
C
= 8.0 A; I
B
= 1.6 A
I
C
= 8.0 A; I
B
= 1.6 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 8 A; V
CE
= 5 V
I
F
= 8 A
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
EBO
R
eb
BV
EBO
V
CEOsust
Emitter cut-off current
Base-emitter resistance
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
72
-
7.5
800
110
55
13.5
-
218
-
-
-
mA
V
V
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
5
-
-
-
5.0
1.1
-
9.5
2.0
V
V
11
7
1.6
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (32 kHz line
deflection circuit)
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 8.0 A; L
C
= 260
μ
H; C
fb
= 13 nF;
I
= 1.1 A; L
B
= 2.5
μ
H; -V
BB
= 4 V;
(-dI
B
/dt = 1.6 A/
μ
s)
TYP.
145
MAX.
-
UNIT
pF
t
s
t
f
V
fr
Turn-off storage time
Turn-off fall time
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
3.0
0.2
16
4.0
0.35
-
μ
s
μ
s
V
I
F
= 8 A; dI
F
/dt = 50 A/
μ
s
t
fr
V
F
= 5 V
410
-
ns
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BU2525DW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2525DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2527A | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| BU2527AF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BU2527AF/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR ISOLATED SOT199 |
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