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參數(shù)資料
| 型號： | BU2508DF |
| 廠商： | 永盛國際集團 |
| 英文描述： | NPN TRIPLE DIFFUSE PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
| 中文描述： | npn型三重漫平面硅晶體管（彩電產(chǎn)量的橫向應用） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 71K |
| 代理商： | BU2508DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 600 mA
V
= 7.5 V
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 4.5 A; I
B
= 1.12 A
I
C
= 4.5 A; I
B
= 1.7 A
I
C
= 1 A; V
= 5 V
I
C
= 4.5 A; V
CE
= 1 V
I
F
= 4.5 A
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
R
be
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
-
227
13.5
33
-
-
-
-
-
mA
V
V
7.5
-
700
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
4
-
-
-
1.0
1.1
-
7.0
2.0
V
V
13
5.5
1.6
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (38 kHz line
deflectioin circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
= 4.5 A; I
B(end)
= 1.1 A; L
B
= 6
μ
H;
-V
BB
= 4 V; (-dI
B
μ
s)
TYP.
80
MAX.
-
UNIT
pF
5.0
0.4
6.0
0.6
μ
s
μ
s
I
= 4.0 A; I
B(end)
= 0.9 A; L
B
= 6
μ
H;
-V
BB
= 4 V; (-dI
B
μ
s)
4.7
0.25
5.7
0.35
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.600
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PDF描述 |
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| BU4507AZ | Silicon Diffused Power Transistor |
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| BU4507DZ | Silicon Diffused Power Transistor |
| BU4508AX | Silicon Diffused Power Transistor |
| BU508D | HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BU2508DF PHILIPS | 制造商:Distributed By MCM 功能描述:Bu2508Df 1.5Kv 8A 45W Bce Philips Transistor SOT-199 NPN |
| BU2508DF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU2508DF/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HIGH VOLT SOT-199 |
| BU2508DW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2508DX | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SOT-93 NPN 1500V 8A 45W BCE |
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