參數(shù)資料
型號: BU208D
廠商: 永盛國際集團
英文描述: SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
中文描述: 擴散硅功率晶體管(一般)的說明
文件頁數(shù): 2/8頁
文件大?。?/td> 80K
代理商: BU208D
THERMAL DATA
TO-3
TO-218
ISOWATT218
R
thj-case
Thermal Resistance Junction-case
Max
1
1
2.5
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
INDUCTIVE LOAD
Storage Time
Fall Time
V
CE
= 1500 V
V
CE
= 1500 V
V
EB
= 5 V
T
j
= 125
o
C
1
2
mA
mA
I
EBO
300
mA
V
CEO(sus)
I
C
= 100 m A
700
V
V
CE(sat)
I
C
= 4.5 A
I
B
= 2 A
1
V
V
BE(sat)
I
C
= 4.5 A
I
B
= 2 A
1.3
V
t
s
t
f
V
F
I
C
= 4.5 A
L
C
= 0.9 mH
h
FE
= 2.5
L
B
= 3
μ
H
V
CC
= 140 V
7
550
ms
ns
Diode Forward Voltage
I
F
= 4 A
2
V
f
T
Transition Frequency
I
C
= 0.1 A
V
CE
= 5 V
f = 5 MHz
7
MHz
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe OperatingArea (TO-3)
Safe OperatingArea (TO-218/ISOWATT218)
BU208D / BU508D / BU508DFI
2/8
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