參數(shù)資料
      型號: BU-61582D3-891L
      廠商: DATA DEVICE CORP
      元件分類: 微控制器/微處理器
      英文描述: 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, CQIP70
      封裝: CERAMIC, DIP-70
      文件頁數(shù): 27/48頁
      文件大?。?/td> 378K
      代理商: BU-61582D3-891L
      33
      Data Device Corporation
      www.ddc-web.com
      BU-61582
      G-08/02-250
      ns
      0
      STRBD high hold time from READYD rising
      t18
      ns
      40
      STRBD rising delay to output Data tri-state
      t17
      ns
      0
      Output Data hold time following STRBD rising edge
      t16
      note 6
      ns
      40
      STRBD rising edge delay to IOEN rising edge and READYD rising edge
      t15
      ns
      READYD falling to STRBD rising release time
      t14
      note 6
      ns
      0
      CLOCK IN rising edge delay to READYD falling
      t13
      note 2
      ns
      0
      SELECT hold time following IOEN falling
      t6
      ns
      70
      Address valid setup time following SELECT and STRBD low (@ 12 MHz)
      t4
      notes 2, 6
      ns
      128.3
      SELECT and STRBD low delay to IOEN low (uncontended access @ 12 MHz)
      t2
      ns
      10
      Address valid setup time prior to CLOCK IN rising edge
      t9
      note 6
      ns
      455
      437.5
      420
      IOEN falling delay to READYD falling (reading RAM @ 16 MHz)
      t11
      note 6
      ns
      205
      187.5
      170
      IOEN falling delay to READYD falling (reading registers @ 16 MHz)
      t11
      note 6
      ns
      600
      583.3
      565
      IOEN falling delay to READYD falling (reading RAM @ 12 MHz)
      t11
      notes 3, 4, 5
      ns
      25
      MEM/REG, RD/WR hold time prior to CLOCK IN falling edge
      t8
      note 6
      ns
      54
      Output Data valid prior to READYD falling (@ 12 MHz)
      t12
      note 6
      ns
      33
      Output Data valid prior to READYD falling (@ 16 MHz)
      t12
      note 6
      ns
      265
      250
      230
      IOEN falling delay to READYD falling (reading registers @ 12 MHz)
      t11
      note 9
      ns
      25
      Address hold time following CLOCK IN rising edge
      t10
      notes 3, 4, 5
      ns
      10
      MEM/REG, RD/WR setup time prior to CLOCK IN falling edge
      t7
      ns
      30
      CLOCK IN rising edge delay to IOEN falling edge
      t5
      ns
      50
      Address valid setup time following SELECT and STRBD low (@ 16 MHz)
      t4
      ns
      20
      MEM/REG, RD/WR setup time following SELECT and STRBD low(@ 12 MHz)
      t3
      ns
      10
      MEM/REG, RD/WR setup time following SELECT and STRBD low(@ 16 MHz)
      t3
      notes 2, 6
      s
      5.24
      SELECT and STRBD low delay to IOEN low (contended access @ 16 MHz)
      t2
      notes 2, 6
      ns
      107.5
      SELECT and STRBD low delay to IOEN low (uncontended access @ 16 MHz)
      t2
      note 2
      ns
      15
      SELECT and STRBD low setup time prior to clock rising edge
      t1
      NOTE REFERENCE
      UNITS
      MAX
      TYP
      MIN
      DESCRIPTION
      REF
      s
      6.97
      SELECT and STRBD low delay to IOEN low (contended access @ 12 MHz)
      t2
      TABLE FOR FIGURE 16. CPU READING RAM OR REGISTERS (SHOWN FOR 16-BIT, BUFFERED, NONZERO
      WAIT MODE)
      Notes for FIGURE 16 and associated table.
      1. For the 16-bit buffered configuration, the inputs TRIGGER_SEL
      and MSB/LSB may be connected to +5 V or GND. For the nonzero
      wait interface ZEROWAIT, must be connected to logic “1”.
      2. SELECT and STRBD may be tied together. IOEN goes low on the
      first rising CLK edge when SELECT STRBD is sampled low (satis-
      fying t2) and the BU-61582’s protocol/memory management logic
      is not accessing the internal RAM. When this occurs, IOEN goes
      low, starting the transfer cycle. After IOEN goes low, SELECT may
      be released high.
      3. MEM/REG must be presented high for memory access, low for
      register access.
      4. MEM/REG and RD/WR are buffered transparently until the first
      falling edge of CLK after IOEN goes low. After this CLK edge,
      MEM/REG and RD/WR become latched internally.
      5. The logic sense for RD/WR in the diagram assumes that POLARI-
      TY_SEL is connected to logic "1". If POLARITY_SEL is connected
      to logic "0", RD/WR must be asserted low to read.
      6. The timing for IOEN, READYD and D15-D0 assumes a 50 pf load.
      For loading above 50 pf, the validity of IOEN, READYD, and D15-
      D0 is delayed by an additional 0.14 ns/pf typ, 0.28 ns/pf max.
      7. Timing for A15-A0 assumes ADDR-LAT is connected to logic “1”.
      Refer to Address Latch timing for additional details
      8. Internal RAM is accessed by A13 through A0. Registers are
      accessed by A4 through A0.
      9. The address bus A15-A0 is internally buffered transparently until
      the first rising edge of CLK after IOEN, goes low. After this CLK
      edge, A15-A0 become latched internally.
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